Lecturer

Phone: (86)27-87792692

Email: liyi@hust.edu.cn

Academic Areas: Phase change memory, Memristor, novel electronic devices that capable of information storage and processing, such as electronic synaptic devices, nonvolatile logic devices, and their related physics and applications.

Academic Degrees

PhD in Microelectronics and Solid State Electronics, 2014, Huazhong University of Science and Technology; 
BA in Electronic Science and Technology, 2009, Huazhong University of Science and Technology.

Professional Experience

Huazhong University of Science & Technology, School of Optical and Electronic information, Lecturer (2015.03-present); 
Huazhong University of Science & Technology, School of Optical and Electronic information, Research assistant (2014-2015.02);

Selected Publications

  1. P. Yan, Y. Li, Y. J. Hui, S. J. Zhong, Y. X. Zhou, L. Xu, N. Liu, H. Qian, H. J. Sun*, X. S. Miao, Conducting mechanism of forming-free TiW/Cu2O/Cu memristive devices, Applied Physics Letters, (In press) 2015.
  2. J. T. Yu, Y. Li, X. M. Mu, J. J. Zhang, X. S. Miao, and S. N. Wang, “Modeling the AgInSbTe memristor”, Radioengineering,(In press)2015.
  3. Y. P. Zhong, Y. Li, L. Xu, and X. S. Miao*, Simple square spikes for implementing spike-timing-dependent plasticity in phase-change memory, Physica status solidi (RRL) – Rapid Research Letters, 9(7): 414-419 (2015).
  4. Y. Li, L. Xu, Y. P. Zhong, Y. X. Zhou, S. J. Zhong, Y. Z. Hu, L. O. Chua, and X. S. Miao*, “Associative learning with temporal contiguity in a memristive circuit for large-scale neuromorphic networks”, Advanced Electronic Materials, doi:10.10002/aelm.201500125 (2015).
  5. Y. X. Zhou, Y. Li, L. Xu, S. J. Zhong, H. J. Sun, and X. S. Miao*, “16 Boolean logics in three steps with two anti-serially connected memristors”, Applied Physics Letters, 106, 233502 (2015).
  6. L. Xu, Y. Li, N. N. Yu, Y. P. Zhong, and X. S. Miao*, “Local order origin of thermal stability enhancement of amorphous Ag doping GeTe”, Applied Physics Letters, 106, 031904 (2015).
  7. Y. Li, Y. P. Zhong, J. J. Zhang, L. Xu, Q. Wang, H. J. Sun, H. Tong, X. M. Cheng and X. S. Miao*, Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems, Scientific Reports, 4, 4906 (2014).
  8. Y. Li, Y. P. Zhong, L. Xu, J. J. Zhang, X. H. Xu, H. J. Sun, and X. S. Miao*, Ultrafast synaptic events in a chalcogenide memristor, Scientific Reports, 3, 1619 (2013).
  9. Y. Li, Y. P. Zhong, J. J. Zhang, X. H. Xu, Q. Wang, L. Xu, H. J. Sun, and X. S. Miao*, Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5, Applied Physics Letters, 103, 043501 (2013).
  10. Y. Li, Y. P. Zhong, Y. X. Zhou, Y. F. Deng, L. Xu, and X. S. Miao*, AND, OR, NOT Boolean logic in phase change memory, Journal of Applied Physics, 114, 234503 (2013).
  11. J. J. Zhang, H. J. Sun*, Y. Li, Q. Wang, X. H. Xu, and X. S. Miao, AgInSbTe memristor with gradual resistance tuning, Applied Physics Letters, 102, 183513 (2013).
  12. X. M. Long, X. S. Miao*, J. J. Sun, X. M. Cheng, H. Tong, Y. Li, D. H. Yang, J. D. Huang, and C. Liu, Dynamic switching characteristic dependence on sidewall angle for phase change memory, Solid-State Electronics, 67, 1 (2012).

 

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