Associate Professor

Phone: +86 27 87542894


Academic Areas: Synthesis and application of semiconducting nanomaterials

Jianbing Zhang received his Ph. D. degree in Microelectronics and Solid State Electronics from Huazhong University of Science and Technology in 2010. His Ph. D. work focuses on synthesis and optical property of III-V (InP and InAs) quantum dots (QDs). He developed a new synthetic method for InAs QDs using a gaseous precursor. From 2012 to 2014, he worked as a postdoctor at National Renewable Energy Laboratory (NREL, USA) with Prof. Arthur J. Nozik. His work at NREL involves new syntheses of PbS and PbSe QDs for excellent surface passivation and mechanism of QD solar cells. For the first time, he directly synthesized air-stable PbSe QDs and fabricated PbSe QD solar cells in air, demonstrating a record power conversion efficiency for PbSe QD solar cells.

Jianbing Zhang joined School of Optical and Electronic Information at Huazhong University of Science and Technology in 2010. At present, his research involves synthesis of a variety of nanomaterials with different shapes (sphere, rod, core/shell, hollow and hetero- structrues) and their applications in optoelectronic and electronic devices.

Academic Degrees

2010, Ph. D. in Microelectronics and Solid State Electronics, Huazhong University of Science and Technology (HUST).

2006, Master of Engineering in Microelectronics and Solid State Electronics, HUST

2003, Bachelor of Engineering in Electronic Science and Technology, HUST

Professional Experience

2010-present: Associate Professor at HUST

2012-2014: Postdoctor at National Renewable Energy Laboratory

Selected Publications

  1. Zhang, J.; Chernomordik, B. D.; Crisp, R. W.; Kroupa, D. M.; Luther, J. M.; Miller, E. M.; Gao, J.; Beard, M. C., Preparation of Cd/Pb Chalcogenide Heterostructured Janus Particles via Controllable Cation Exchange. ACS Nano 2015, 9, 7151-63.
  2. Zhang, J.; Gao, J.; Church, C. P.; Miller, E. M.; Luther, J. M.; Klimov, V. I.; Beard, M. C., PbSe Quantum Dot Solar Cells with More than 6% Efficiency Fabricated in Ambient Atmosphere. Nano Lett. 2014, 14, 6010-6015.
  3. Zhang, J.; Gao, J.; Miller, E. M.; Luther, J. M.; Beard, M. C., Diffusion-Controlled Synthesis of PbS and PbSe Quantum Dots with in Situ Halide Passivation for Quantum Dot Solar Cells. ACS Nano 2014, 8, 614-22.
  4. Gao, J.||; Zhang, J.||; (|| contributed equally) van de Lagemaat, J.; Johnson, J. C.; Beard, M. C., Charge Generation in PbS Quantum Dot Solar Cells Characterized by Temperature-Dependent Steady-State Photoluminescence. ACS Nano 2014, 8, 12814-25.
  5. Zhang, J.; Zhang, D., Photoluminescence and Growth Kinetics of High-Quality Indium Arsenide and InAs-Based Core/Shell Colloidal Nanocrystals Synthesized Using Arsine (AsH3) Generated via Zinc Arsenide as the Arsenic Source. Chem. Mater. 2010, 22, 1579-1584.
  6. Zhang, J.; Crisp, R. W.; Gao, J.; Kroupa, D. M.; Beard, M. C.; Luther, J. M., Synthetic Conditions for High-Accuracy Size Control of PbS Quantum Dots. The Journal of Physical Chemistry Letters 2015, 6, 1830-1833
  7. Zhang, J.; Li, R.; Sun, W.; Wang, Q.; Miao, X.; Zhang, D., Temporal evolutions of the photoluminescence quantum yields of colloidal InP, InAs and their core/shell nanocrystals. Journal of Materials Chemistry C 2014, 2, 4442.
  8. Zhang, J.; Sun, W.; Yin, L.; Miao, X.; Zhang, D., One-pot synthesis of hydrophilic CuInS2 and CuInS2–ZnS colloidal quantum dots. Journal of Materials Chemistry C 2014, 2, 4812.
  9. Zhang, J.; Zhang, D., Synthesis and growth kinetics of high quality InAs nanocrystals using in situ generated AsH3 as the arsenic source. CrystEngComm 2010, 12, 591-594.
  10. Crisp, R. W.; Kroupa, D. M.; Marshall, A. R.; Miller, E. M.; Zhang, J.; Beard, M. C.; Luther, J. M., Metal Halide Solid-State Surface Treatment for High Efficiency PbS and PbSe QD Solar Cells. Sci. Rep. 2015, 5, 9945.
  11. Li, R.; Zhang, J.; Xu, Y.; Miao, X.; Zhang, D., Electronic transport behaviours of lead chalcogenide (PbE)n (E = S and Se) nanocluster junctions by ab initio simulation. RSC Adv. 2014, 4, 14221-14226.
  12. Zhou, Y.; Zhang, J.; Ye, C.; Miao, X.; Zhang, D., The electronic transport behavior of hybridized zigzag graphene and boron nitride nanoribbons. J. Appl. Phys. 2014, 115, 114313.
  13. Zhou, Y.; Zhang, J.; Zhang, D.; Ye, C.; Miao, X., Phosphorus-doping-induced rectifying behavior in armchair graphene nanoribbons devices. J. Appl. Phys. 2014, 115, 013705.
  14. Wang, Q.; Zhang, J.; Li, R.; Xu, Y.; Miao, X.; Zhang, D., Metallic behavior and negative differential resistance properties of (InAs) n (n=24) molecule cluster junctions via a combined non–equilibrium Green's function and density functional theory study. J. Appl. Phys. 2014, 115, 233712.
  15. Zhang, D.; Zhang, J.; Wu, Q.; Miao, X., Microstructure, Morphology, and Ultraviolet Emission of Zinc Oxide Nanopolycrystalline Films by the Modified Successive Ionic Layer Adsorption and Reaction Method. J. Am. Ceram. Soc. 2010, 93, 3284-3290.
  16. Zhang, D.; Zhang, J.; Cheng, Y.; Yuan, L.; Miao, X., Ultraviolet Emission and Electrical Properties of Aluminum-Doped Zinc Oxide Thin Films with Preferential C-Axis Orientation. J. Am. Ceram. Soc. 2010, 93, 3291-3298.
  17. Zhang, D.; Zhang, J.; Wu, Q.; Miu, X., Ultraviolet emission of ZnO nano-polycrystalline films by modified successive ionic layer adsorption and reaction technique. J. Sol-Gel Sci. Technol. 2010, 54, 165-173.
  18. Zhang, D.; Zhang, J.; Guo, Z.; Miao, X., Optical and electrical properties of zinc oxide thin films with low resistivity via Li-N dual-acceptor doping. J. Alloys Compd. 2011, 509, 5962-5968.
  19. Zhang, D.; Song, J.; Zhang, J.; Wang, Y.; Zhang, S.; Miao, X., A facile and rapid synthesis of lead sulfide colloidal quantum dots using in situ generated H2S as the sulfur source. CrystEngComm 2013, 15, 2532-2536.
  20. Zhou, Y.; Zhang, D.; Zhang, J.; Ye, C.; Miao, X., Negative differential resistance behavior in phosphorus-doped armchair graphene nanoribbon junctions. J. Appl. Phys. 2014, 115, 073703.
  21. Zhang, D.; Zhai, G.; Zhang, J.; Yuan, L.; Miao, X.; Zhu, S.; Wang, Y., Growth orientation and shape evolution of colloidal lead selenide nanocrystals with different shapes. CrystEngComm 2010, 12, 3243-3248.
  22. Zhang, D.; Huang, Y.; Zhang, J.; Yuan, L.; Miao, X., Investigation into Texture, Preferential Orientation, and Optical Properties of Zinc Oxide Nanopolycrystalline Thin Films Deposited by the Sol–Gel Technique on Different Substrates. J. Electron. Mater. 2011, 40, 459-465.
  23. Zhang, J.; Tolentino, J.; Smith, E. R.; Zhang, J.; Beard, M. C.; Nozik, A. J.; Law, M.; Johnson, J. C., Carrier Transport in PbS and PbSe QD Films Measured by Photoluminescence Quenching. J. Phys. Chem. C 2014, 118, 16228-16235.
  24. Zhang, D.; Deng, Z.; Zhang, J.; Chen, L., Microstructure and electrical properties of antimony-doped tin oxide thin film deposited by sol-gel process. Mater. Chem. Phys. 2006, 98, 353-357.
  25. Chen, L.; Zhang, D.; Zhai, G.; Zhang, J., Comparative study of ZnSe thin films deposited from modified chemical bath solutions with ammonia-containing and ammonia-free precursors. Mater. Chem. Phys. 2010, 120, 456-460.
  26. Zhang, D.; Tao, L.; Deng, Z.; Zhang, J.; Chen, L., Surface morphologies and properties of pure and antimony-doped tin oxide films derived by sol-gel dip-coating processing. Mater. Chem. Phys. 2006, 100, 275-280.
  27. Zhang, J.; Zhang, D.; Yuan, L.; Hu, Y. The growth kinetics of colloidal InP nanocrystals, In proceeding of 3rd IEEE International Conference of Nano/Micro Engineered and Molecular Systems. 2008. 510-514.

Courses Taught

Physics of Semiconductor Devices

Introduction to Optoelectronic Devices

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