Professor

Phone: (86)27-87792091

Email: miaoxs@mail.hust.edu.cn

Academic Areas: Microelectronics and Solid State Electronics

Vice-President,Instrument Materials Society of China

Member of Technical Editorial Board, IEEE Nanotechnology Magazine

Research Interest: Memory (phase change memory, memristor/RRAM, STT-MRAM, 3D-NAND), Media (optical and magnetic), Microelectronic Devices

Academic Degrees

1996, PhD Degree, Electronic Materials and Devices, Huazhong University of Science and Technology, CHINA
1989, Master Degree, Electronic Materials and Devices, Huazhong University of Science and Technology, CHINA
1986, Bachelor Degree, Electronic Materials and Devices, Huazhong University of Science and Technology, CHINA

Professional Experience

Chang Jiang Professor (MOE) and head of Microelectronics Department and director of Institute of Information Storage Materials and Devices, Huazhong University of Science and Technology, CHINA (2007-present); 
Research Scientist/ Senior Research Engineer, Data Storage Institute, Agency for Science, Technology and Research (A*STAR), Singapore (1997-2007); 
Research Fellow/ Research Associate, City University of Hong Kong, Hong Kong (1996-1997); 
Associate Professor/ Lecturer/Assistant Professor, Huazhong University of Science and Technology, CHINA (1989-1995).

Selected Publications

1. Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic System, Y. Li, Y. P. Zhong, J. J. Zhang, L. Xu, Q. Wang, H. J. Sun, H. Tong, X. M. Cheng, X. S. Miao, Scientific Reports(Nature Publishing Group), volume 4, 4906,2014.                                                                                                                                                                                                                                         2. Nonvolatile ‘AND’ ‘OR’ ‘NOT’ Boolean Logic Gates Based on Phase-Change Memory, Y. Li, Y. P. Zhong, Y. F. Deng, Y. X. Zhou, L. Xu and X. S. Miao, Journal of Applied Physics, 114, 234503 , 2013
3. Thermal dispersion and secondary crystallization of phase change memory cells, Deng Y. F., Li Z., Peng J. H., Liu C., Chen W., Miao X.S., Applied Physics Letters, 103(23), 233501, 2013 
4. Local order of Ge atoms in amorphous GeTe nanoscale ultrathin films, Yu N.N., Tong H., Zhou J., Elbashir A.A., Miao X.S., Applied Physics Letters, 103(6), 061910, 2013
5. Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5, Li Y., Zhong Y.P., Zhang J.J., Xu X.H.,  Wang Q., Xu  L, Sun  H.J., Miao X.S., Applied Physics Letters,103(4), 043501, 2013
6. AgInSbTe memristor with gradual resistance tuning, Zhang J.J., Sun H.J., Li Y., Wang Q., Xu X.H., Miao X.S., Applied Physics Letters,102(18), 183513, 2013
7. Picosecond amorphization of chalcogenides material: From scattering to ionization, Wang, P. Ju, C., Chen, W, Huang, D.Q, X. S. Miao, Applied Physics Letters, 102(11), 112108, 2013 
8. Ferromagnetism and electronic transport in epitaxial Ge1-xFexTe thin film grown by pulsed laser deposition, Liu, J.D., Miao, X.S. ; Tong, F. ; Luo, W. ; Xia, Z.C., Applied Physics Letters, 102(10), 102402, 2013
9. Ultrafast synaptic events in a chalcogenide memristor, Y. Li, Y. P. Zhong, L. Xu, J. J. Zhang, X. H. Xu, H. J. Sun, X. S. Miao, Scientific Reports (Nature Publishing Group), volume 3, 1619,2013. 
10. Intrinsic threshold mechanism of phase-change memory cells by pulsed current–voltage characterization, Chen W, Li Z, Peng JH, Deng YF, Miao XS, APPLIED PHYSICS LETTERS, Volume: 101, Issue: 14,  142107, 2012.
11. Amorphization and amorphous stability of Bi2Te3 chalcogenide films, Ju C, Cheng XM, Miao XS, APPLIED PHYSICS LETTERS, Volume: 100, Issue: 14, 142114, 2012.
12. Phonon Properties and Low Thermal Conductivity of Phase Change Material with Superlattice-Like Structure, Long PY,  Tong H, Miao XS, APPLIED PHYSICS EXPRESS, Volume: 5, Issue: 3, Article Number: 031201,  MAR 2012.
13. Insulator-metal transition in GeTe/Sb2Te3 multilayer induced by grain growth and interface barrier, Tong H, Miao XS,  Yang Z, Cheng XM, APPLIED PHYSICS LETTERS, Volume: 99, Issue: 21, 212105, 2011
14. Anomalous second ferromagnetic phase transition as a signature of spinodal decomposition in Fe-doped GeTe diluted magnetic semiconductor,  Tong F,  Hao JH, Chen ZP, Gao GY, Tong H, Miao XS, APPLIED PHYSICS LETTERS,  Volume: 99,  Issue: 20,  202508,  2011
15. Phase-change control of ferromagnetism in GeTe-based phase change magnetic thin-films by pulsed laser deposition,  Tong F, Hao JH, Chen ZP,  Gao GY, Miao XS, APPLIED PHYSICS LETTERS, Volume: 99, Issue: 8, 081908, 2011
16. Nonthermal phase transition in phase change memory cells induced by picosecond electric pulse, Huang DQ, Miao XS,  Li Z, Sheng JJ, Sun JJ, Peng JH, Wang JH, Chen Y,  Long XM, APPLIED PHYSICS LETTERS, Volume: 98, Issue: 24, 242106, 2011
17. Thermal conductivity of chalcogenide material with superlatticelike structure, Tong H, Miao XS, Cheng XM, Wang H,  Zhang L,  Sun JJ,  Tong F, Wang JH, APPLIED PHYSICS LETTERS, Volume: 98, Issue: 10, 101904, 2011
18. Effective method to identify the vacancies in crystalline GeTe, Tong F, Miao XS, Wu Y, Chen ZP, Tong H, Cheng XM, APPLIED PHYSICS LETTERS, Volume: 97, Issue: 26, 261904,  2010

 

Awards and Honors

2011, State Council expert for special government allowance, China
2004, National Technology Award , Singapore
1998, National Award of Science & Technology Development , China
1992, National Award of Science & Technology Development , China

Courses Taught

Solid State Physics (Undergraduate students)

Semiconductor Materials and Devices (Graduated students)

Progress in Microelectronics (PhD students)

Centers/Programs

Wuhan National Laboratory for Optoelectronics(WNLO)

Wuhan National High Magnetic Field Center

Innovation Institute, HUST

Institute of Information Storage Materials and Devices

Login and edit information