Associate Professor

Phone: 86-18627193680

Email: yqwu@mail.hust.edu.cn

Academic Areas: nanoscience and technology, semiconductor device and circuit design

Academic Degrees

Ph.D. in Electrical and Computer Engineering,   Purdue Univ., W. Lafayette, IN.  Aug. 2005 - Dec. 2009   
B.S.E.E.  Fudan Univ., Shanghai, China     Sep. 2001 - Jul. 2005

Professional Experience

Extensive experience in nanoscience and technology, semiconductor device and circuit design
Published more than 50 papers on journals and conferences, cited more than 500 times

2012- Professor, Huazhong Univ. of Science and Technology, Wuhan, China
2010- 2012 Postdoc Research Scientist, and promoted to Research Staff Member
IBM T.J Watson Research Center, NY
2005- 2009  Research Assistance, Dept. of  ECE, Purdue Univ. West Lafayette, IN. US

Selected Research Achievements:
Realized world’s fastest epitaxial graphene RF transistor and presented at IEDM 2011 as “Late News”
Developed world’s first graphene integrated circuit and published in Science
Demonstrated worlds’ fastest and smallest CVD graphene RF transistors and published in Nature
Realized world’s fastest epitaxial graphene RF transistor and presented at IEDM 2010 as “Late News”
Designed radio-frequency transistors and circuit for low-noise amplifier and mixer.
Configured electrical measurement set-up for radio-frequency measurement up to 50 GHz.
Realized the first nanoscale III-V 3-dimensional FinFET as highlighted by IEDM 2009.
Developed retrograde doping and halo implant on InGaAs MOSFETs for the first time.
Developed the first GaAs MOSFET on Si substrate and reported by Compound Semiconductors.
Identified by Thomson Reuters ScienceWatch® on a paper as one of the most cited paper in the past two years in engineering field

MEDIA REPORT FOR RESEARCH ACHIEVEMENTS
Chemical & Engineering News: “New Route To Graphene Devices” by Mitch Jacoby, Apr. 11, 2011
Nature: “Industry-compatible graphene transistors” by Frank Schwierz, Apr. 7, 2011
IEEE Spectrum : “First Gallium-Based FinFETs” by Anne-Marie Corley, Nov. 2009
Semiconductor Today: “First InGaAs FinFETs suppress short-channel effects”,by Mike Cooke, Dec. 2009
Electronic Products: “New finFETs promise smaller,faster chips”, by Christina D’Airo, Dec. 2009
National Science Foundation (NSF) news: “New 'FinFETS' Promising for Smaller Transistors,
More Powerful Chips”, Nov. 2009
EE Times: “IEDM offers most recent research nuggets”by Nicolas Mokhoff, Oct. 2009
Selected as one of the eight conference highlights for IEDM 2009.
Compound Semiconductor: “Atomic deposition promises InP logic”, Sep. 2007
Research work also covered by Fox News, the New York Times, the Washington Post, Sciencedaily.com, physorg.com, ascribe.org, inscience.org and many other news outlets.

Selected Publications

[1]Wu, Y.Q.,Farmer, D.B. et al., “Graphene Electronics: Materials, Devices, and Circuits” , Proceedings of the IEEE (Invited), doi: 10.1109/JPROC.2013.2260311, 2013
[2]Yan, H.G., Low, T., Zhu. W., Wu Y.Q.,  et al., “Damping pathways of mid-infrared plasmons in graphene nanostructures”, Nature Photonics, doi:10.1038/nphoton.2013.57, 2013
[3]Liu, G., Wu, Y.Q., et al., “Epitaxial Graphene Nanoribbon Array Fabrication using BCP-Assisted Nanolithography”, ACS Nano, Just accepted. DOI: 10.1021/nn301515a, 2012
[4]Yan, H., Li, X., Chandra, B., Tulevski, G., Wu, Y.Q, et al., “Tunable infrared plasmonic devices using graphene/insulator stacks”, Nature Nanotech., 7, 330–334, 2012
[5]Wu, Y.Q., Jenkins K.A., et al., “ State-of-the-Art Graphene High-Frequency Electronics”, Nano Lett., 12 (6), pp 3062–3067, 2012
[6]Wu, Y.Q.,* Perebeinos, V.* et al., “Quantum behavior of graphene transistors near the scaling limit” , Nano Lett., 12 (3), pp 1417–1423 2012
[7]Wu, Y.Q.,* Farmer, D.B.* et al., “Three-Terminal Graphene Negative Differential Resistance Devices”, ACS Nano, 6 (3), pp 2610–2616 2012
[8]Lin, Y.-M., Valdes-Garcia, A., Han, S.-J., Farmer, D. B., Meric, I., Sun, Y., Wu, Y.Q. et al., “Wafer-scale Graphene Integrated Circuit ”, Science 332(6035), 1294-1297 (2011).
[9]Wu, Y.Q., Lin, Y.-M. et al., “High-frequency, scaled graphene transistors on diamond-like carbon” , Nature 472 (7341) 74-78 April 7 2011
[10]Xia FN, Perebeinos V, Lin, Y.-M., Wu, Y.Q. et al., “The origins and limits of metal-graphene junction resistance”, Nature Nanotechnology (3) 179-184 March 2011 
[11]Wu, Y.Q., Farmer, D.B. et al., “Record High RF Performance for Epitaxial Graphene Transistors (Late News),”, 2011 International Electron Devices Meeting (IEDM 2011), Washington DC , December 5-7, 2011
[12]Wu, Y.Q., Lin, Y.-M. et al., “RF Performance of Short Channel Graphene Field-Effect Transistor (Late News),”, 2010 International Electron Devices Meeting (IEDM 2010), San Francisco , December 6-8, 2010
[13]Wu, Y.Q., and Ye, P.D. “Scaling of InGaAs MOSFETs into deep-submicron”, ECS Transactions, vol. 28,
no.5, pp 185-201, April 2010
[14]Wu, Y.Q., Wang, R.S. et al., “First Experimental Demonstration of 100 nm Inversion-mode InGaAs FinFET through Damage-free Sidewall Etching”, 2009 International Electron Devices Meeting (IEDM 2009): Page 331-334, December 7-9, 2009
[15]Wu, Y.Q., Xu, M. et al., “High-Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with  Maximum Gm Exceeding 1.1 mS/µm:New HBr Pretreatment and Channel Engineering”, 2009 International Electron Devices Meeting (IEDM 2009): Page 323-326, December 7-9, 2009 
[16]Wu, Y.Q., Wang, W.K. et al., “0.8-V Supply Voltage Deep-Submicron Inversion-Mode In0.75Ga0.25As MOSFET” , IEEE Electron Device Letters 30 (7): 700-702 July 2009
[17]Wu, Y.Q., Xu, M. et al., “Atomic-Layer-Deposited Al2O3/GaAs Metal-Oxide-Semiconductor-Field-Effect Transistor on Si substrates using Aspect Ratio Trapping technique”, Applied Physics Letters 93 (24), No. 242106 December. 17, 2008
[18]Varghese, D.,  Xuan, Y.,  Wu, Y.Q. et al., “Multi-Probe Interface  Characterization of In0.65Ga0.35As/Al2O3 MOSFET”, 2008 IEEE International Electron Devices Meeting (IEDM 2008), San Francisco, CA., USA
[19]Wu, Y.Q., Ye, P.D. et al., “Top-gated graphene field-effect-transistors formed by decomposition of SiC”, Applied Physics Letters 92 (9), No. 092102 March 3, 2008
[20]Wu, Y.Q., Ye, P.D. et al., “Epitaxially grown graphene field-effect transistors with electron   mobility exceeding 1500 cm2/Vs and hole mobility exceeding 3400 cm2/Vs”, International Semiconductor Device Research Symposium 2007 (ISDRS 2007) ,  College Park, MD., USA (Best Student Oral Presentation award)
[21]Xuan, Y., Wu, Y.Q., et al., “High Performance submicron inversion-type enhancement-Mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics”, 2007 International Electron Devices Meeting (IEDM 2007), Washington, DC USA
[22]Wu, Y.Q., Xuan, Y. et al., “Inversion-type enhancement-mode InP MOSFETs with ALD Al2O3,  HfO2 and HfAlO nanolaminaes as high-k gate dielectrics”, Proceeding of 65th Device Research Conference (DRC 2007), Notre Dame, IN.,  USA, 2007
[23]Wu, Y.Q., Xuan, Y. et al., “Enhancement-mode InP n-channel metal-oxide-semiconductor  field-effect-  transistors with atomic- layer-deposited Al2O3 dielectrics”, Applied Physics Letters 91 (2), No. 022108 July 11 2007
[24]Wu, Y.Q., Shen, T. et al., “Photo-assisted capacitance-voltage characterization of high-quality atomic-layer deposited Al2O3/GaN MOS structures” Applied Physics Letters 90 (14), No. 143504 April 2 2007
[25]Wu, Y.Q., Lin, H.C. et al., “Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs”, Applied Physics Letters 90 (7), No. 072105 FEB 2007 
[26]Wu, Y.Q., Ye, P.D. et al.,  “GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric”, Materials Science and Engineering B 135 (3): 282-284 DEC 15 2006

REVIEWER FOR SCIENTIFIC JOURNALS:
Nano Letters
ACS Nano
Advanced Materials
Journal of Electronic Materials
Applied Physics Letters
Journal of Applied Physics
Electrochemical and Solid-State Letters
IEEE Electron Device Letters
IEEE Transactions on Electron Devices
Journal of Electroceramics
Solid State Electronics
Wireless Engineering and Technology
Journal of Physics: Condensed Matter
Physica Status Solidi

Awards and Honors

IBM Research Pat Goldberg Memorial Best Paper Award in Computer Science, Electrical Engineering and Math, 2013
IBM Ph.D. fellowship award, 2009-2010, IBM Corp.
Best Student Oral Presentation Award, International Semiconductor Device Research Symposium 2007

Login and edit information