On January 15th, Prof. Bin Yu was invited by Prof. Xuecheng Zou to visit our school. He is from State University of New York. During his stay here, he gave us a report named From Silicon Scaling to Post-Silicon Nanotechnology. It was held by Prof. Ming Tang, and over 20 teachers and students from relevant majors attended this forum.
Abstract: In the first part of the seminar, some general trends in nanoscale silicon-based CMOS integrated device technology will be reviewed–from material, devices, performance, and integration perspective. As one of the examples of the latest industrial effort on developing ultra-scalable device technology, research on non-conventional transistor structure will be discussed with focus on designing and fabrication of the “three-dimensional” double-gate FinFET. In the second part of the seminar, the role of emerging bottom-up synthesized nanostructures and the associated nano-devices in the “post-silicon” era will be discussed. Some of the latest research progress will be presented.
Biography: Dr. Bin Yu is presently Full Professor in the College of Nanoscale Science & Engineering (CNSE), the State University of New York, Albany, with research interest on nanomaterial-inspired information processing, data storage, and energy harvesting. In particular, he is interested in the material synthesis and device applications of low-dimensional nanostructures (mono-/bilayer graphene and various semiconductor nanowires) for future-generation nanoelectronics, nanoexcitonics, and “green technology”. Since 2007 he has been Consulting Professor in the Paul Allen Center for Integrated Systems and the Department of Electrical Engineering at Stanford University. Before joining SUNY, he was with University of California / NASA Ames Research Center for Nanotechnology, leading the nanoelectronics research program. From 1997 to 2003 he was with Advanced Micro Devices, Inc., managing AMD’s strategic research program in exploratory silicon technology. He made several widely cited, record-breaking research breakthroughs in nanoscale silicon technology.