Institute of Nano/Micro Electronic Devices and Integrated Technology belongs to the Department of Microelectronics of Huazhong University of Science and Technology.
Its main research areas are:(1)the physical characteristic, process and reliability of MOS devices; (2)The modeling and simulation of micro-nano electronic device; (3)Non volatile semiconductor memory(4)Solar cell. The lab has the best teachers and excellent equippments. The institute have taken many research projects of national level, including the 863 and other major national science and technology projects, provincial and municipal projects and cooperation projects. The team takes the leading position in the research of nano and micro electronic devices and integrated technology and have made significant achievements.
1.The physical characteristic, process and reliability of MOS devices.
(1)The manufacturing technology, reliability, interfacial & dielectric characteristic of the ultrathin high-k grating dielectric of MOS device with Si/ Ge/ InGaAs/ GeOI/ SiC base.
(2)Measurement and characterization of the electrical characteristic of the device.
(3)Micro-analysis of the interface and dielectric of the device.
2.The modeling and simulation of micro-nano electronic device
(1)The grid leakage model, threshold voltage model, mobility model, trap model and CV model of small sized MOS device with Si/ Ge/ InGaAs/ GeOI/ SiC base.
(2)High-k grating dielectric MOSFET fringing capacitance model, MOS device manufacture model, MEDICI model and Silvaco TCAD model.
3.Non volatile semiconductor memory
(1)The new grating stack structure design and multi-layer high-k material manufacture of SONOS and MONOS memory with charge trap and floating gate memory .
(2)Modeling, simulation and characteristic research of memory, including: erasable model, retention model, fatigue model and reading interference model.
(1)Solar cells with Si/Ge heterojuction.
(2)Thin film solar cells.
(3)Flexible solar cells.